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1N6642U Arkusz danych(PDF) 4 Page - STMicroelectronics |
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1N6642U Arkusz danych(HTML) 4 Page - STMicroelectronics |
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4 / 7 page ![]() Characteristics 1N6642U 4/7 Doc ID 16972 Rev 2 Figure 5. Junction capacitance versus reverse voltage applied (typical values) Figure 3. Reverse leakage current versus reverse voltage applied (typical values) Figure 4. Relative variation of thermal impedance, junction to case, versus pulse duration I (nA) R 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 0 1020304050 60708090 100 110 T j=150 °C T j=25 °C T j=75 °C V (V) R Z/R th th(j-c) (j-c) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 Single pulse t (s) P C(pF) 0.1 1.0 10.0 110 100 F=1 MHz V OSC=30 mVRMS T j=25 °C V (V) R |
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