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L6370Q Arkusz danych(PDF) 12 Page - STMicroelectronics |
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L6370Q Arkusz danych(HTML) 12 Page - STMicroelectronics |
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12 / 16 page ![]() Circuit description L6370Q 12/16 Doc ID 022313 Rev 1 The hysteresis (see Figure 4) ensures a non intermittent behavior at low supply voltage with a superimposed ripple. The under voltage status is signalled via the DIAG1 and DIAG2 outputs (see the Diagnostic Truth Table 7). 3.7 Demagnetization of inductive loads An internal zener diode, limiting the voltage across the Power MOS to between 50 and 60 V (Vcl), provides safe and fast demagnetization of inductive loads without external clamping devices. The maximum energy that can be absorbed from an inductive load is specified as 1J (at Tj = 85°C) (see Table 3). Figure 6. L6370 short circuit operation waveforms Figure 7. Inductive load equivalent circuit 50V L +VS IS VS RL IO OUTPUT D95IN215A |
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