BD912 datasheet(2/3 Pages) COMSET

Numer części	BD912

Szczegółowy opis	POWER LINEAR AND SWITCHING APPLICATIONS

PDF	3 Pages

Scroll/Zoom	100%

Producent	COMSET [Comset Semiconductor]

Strona internetowa	http://comset.halfin.com

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2 / 3 page

PNP BD912

23/10/2012

COMSET SEMICONDUCTORS

3/3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

ICEO

Collector Cutoff Current

-VCE=50 V, IB=0V

-1

ICBO

Collector Cutoff Current

-VCB=100 V, IE=0V

-0.5

-VCB=100 V, IE=0V, Tj=150°C

-5

IEBO

Emitter Cutoff Current

-VBE=5 V, IC=0

-1

VCEO

Collector Emitter

Breakdown Voltage

IC=10 m A, IB=0V

-100

VBE

Base Emitter Voltage (*)

-IC=5 A, -VCE=4 V

-1.5

hFE

DC Current Gain (*)

-IC=0.5 A, -VCE=4 V

250

-IC=5 A, -VCE=4V

-150

-IC=10 A, -VCE=4V

-VCE(SAT)

Collector-Emitter saturation

Voltage (*)

-IC=5 A, -IB=0.5 A

-IC=10A, -IB=2.5 A

-VBE(SAT)

Base-Emitter saturation

Voltage (*)

-IC=10A, -IB=2.5 A

2.5

Transition frequency

-IC=0.5 A, -VCE=4 V

MHz

(*) Pulse conditions : tp < 300

µs, δ =1.5%

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