TIC108N datasheet(3/4 Pages) COMSET

Numer części	TIC108N

Szczegółowy opis	P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS

PDF	4 Pages

Scroll/Zoom	100%

Producent	COMSET [Comset Semiconductor]

Strona internetowa	http://comset.halfin.com

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3 / 4 page

TIC108A, TIC108B, TIC108C, TIC108D, TIC108E, TIC108M,

TIC108N, TIC108S

02/10/2012

COMSET SEMICONDUCTORS

3 | 3

SEMICONDUCTORS

Notes:

These values apply when the gate-cathode resistance RGK = 1k

These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to

zero at 110°C.

This value may be applied continuously under single phase 50 Hz half-sine-wave operation with

resistive load. Above 80°C derate linearly to zero at 110°C.

This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated

value of peak reverse voltage and on-state current. Surge may be repeated after the device has

returned to original thermal equilibrium.

This value applies for a maximum averaging time of 20 ms.

6. This parameters must be measured using pulse techniques, tW = 300µs, duty cycle ≤ 2 %, voltage-

sensing contacts, separate from the courrent-carrying contacts, are located within 3.2mm (1/8 inch)

from de device body.

MECHANICAL DATA CASE TO-220

TIC108N Arkusz danych(PDF) 3 Page - Comset Semiconductor