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RF--35 Arkusz danych(PDF) 7 Page - Freescale Semiconductor, Inc

Numer części RF--35
Szczegółowy opis  RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs
PDF  20 Pages
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Producent  FREESCALE [Freescale Semiconductor, Inc]
Strona internetowa  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

RF--35 Arkusz danych(HTML) 7 Page - Freescale Semiconductor, Inc

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MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5
7
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — DVB--T (8k OFDM)
12
0.0001
100
0
PEAK--TO--AVERAGE (dB)
Figure 13. Single--Carrier DVB--T (8k OFDM)
10
1
0.1
0.01
0.001
24
6
8
DVB--T (8k OFDM)
64 QAM Data Carrier Modulation
5 Symbols
5
--20
--5
7.61 MHz
f, FREQUENCY (MHz)
Figure 14. DVB--T (8k OFDM) Spectrum
--30
--40
--50
--90
--70
--80
--100
--110
--60
--4
--3
--2
--1
0
1
2
3
4
4kHz BW
10
ACPR Measured at 4 MHz Offset
from Center Frequency
Figure 15. Single--Carrier DVB--T (8k OFDM)
Power Gain versus Output Power
(Single--Ended Narrowband Test Circuit)
23
1
IDQ = 450 mA
Pout, OUTPUT POWER (WATTS) AVG.
10
40
350 mA
VDD = 50 Vdc, f = 860 MHz
DVB--T (8k OFDM), 64 QAM
Data Carrier Modulation, 5 Symbols
22.5
22
21.5
21
20.5
Figure 16. Single--Carrier DVB--T (8k OFDM)
ACPR versus Output Power (Single--Ended
Narrowband Test Circuit)
--68
--54
1
Pout, OUTPUT POWER (WATTS) AVG.
--56
10
40
--60
VDD = 50 Vdc, f = 860 MHz
DVB--T (8k OFDM), 64 QAM
Data Carrier Modulation, 5 Symbols
--62
IDQ = 250 mA
300 mA
--64
--66
Figure 17. Single--Carrier DVB--T (8k OFDM) Drain Efficiency,
Power Gain and ACPR versus Output Power versus
Temperature (Single--Ended Narrowband Test Circuit)
0
--70
Pout, OUTPUT POWER (WATTS) AVG.
50
--45
30
10
--50
1
--60
40
40
20
--55
10
--65
ηD
25_C
TC =--30_C
85_C
Gps
ACPR
VDD =50 Vdc,IDQ = 350 mA
f = 860 MHz, DVB--T (8k OFDM)
64 QAM Data Carrier Modulation
5 Symbols
4kHz BW
DVB--T (8k OFDM)
64 QAM Data Carrier Modulation, 5 Symbols
250 mA
300 mA
--58
350 mA
450 mA
25_C
--30_C
85_C



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