AOD480_12 datasheet(2/6 Pages) AOSMD

2 / 6 page

AOD480

Symbol

Min

Typ

Max

Units

BVDSS

0.004

TJ=55°C

IGSS

100

VGS(th)

1.5

2.1

2.6

ID(ON)

18.5

TJ=125°C

25.4

Ω

gFS

VSD

0.75

3.2

Ciss

373

448

Coss

Crss

2.8

Ω

Qg(10V)

5.7

7.1

8.6

Qg(4.5V)

2.7

3.5

4.2

Qgs

1.2

Qgd

1.6

tD(on)

4.3

Drain-Source Breakdown Voltage

On state drain current

ID=250µA, VGS=0V

VGS=10V, VDS=5V

VGS=10V, ID=20A

Reverse Transfer Capacitance

Zero Gate Voltage Drain Current

Gate-Body leakage current

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

RDS(ON)

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

IDSS

µA

Gate Threshold Voltage

VDS=VGS ID=250µA

VDS=24V, VGS=0V

VDS=0V, VGS= ±20V

Ω

VGS=4.5V, ID=8A

IS=1A,VGS=0V

VDS=5V, ID=20A

Maximum Body-Diode Continuous Current

Total Gate Charge

Gate Source Charge

Turn-On DelayTime

DYNAMIC PARAMETERS

VGS=10V, VDS=15V, ID=20A

Total Gate Charge

Gate Drain Charge

VGS=0V, VDS=15V, f=1MHz

SWITCHING PARAMETERS

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Input Capacitance

Output Capacitance

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

tD(on)

4.3

2.8

tD(off)

15.8

trr

8.4

10.5

12.6

Qrr

3.6

4.5

5.4

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs

IF=20A, dI/dt=100A/µs

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=15V, RL=0.75Ω,

RGEN=3Ω

Turn-Off Fall Time

Turn-On DelayTime

A: The value of R θJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

Power dissipation P

DSM is based on R

θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends

on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.

B. The power dissipation P

D is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C: Repetitive rating, pulse width limited by junction temperature T

J(MAX)=175°C.

D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of T

J(MAX)=175°C.

G. The maximum current is limited by package.

H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The SOA

curve provides a single pulse rating.

*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).

Rev3: May. 2011

Alpha & Omega Semiconductor, Ltd.

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