AOD607 datasheet(2/9 Pages) AOSMD

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AOD607

Symbol

Min

Typ

Max

Units

BVDSS

TJ=55°C

IGSS

100

VGS(th)

1.5

1.7

2.5

ID(ON)

TJ=125°C

27.5

Ω

gFS

VSD

0.75

ISM

Ciss

1040

1250

Coss

180

Crss

110

0.7

1.5

Ω

Qg(10V)

19.8

Qg(4.5V)

9.8

12.5

Qgs

2.5

Qgd

3.5

tD(on)

4.5

3.9

tD(off)

17.4

3.2

trr

Qrr

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

VGS=10V, VDS=15V, ID=12A

Total Gate Charge

Gate Drain Charge

VGS=0V, VDS=15V, f=1MHz

SWITCHING PARAMETERS

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=15V, RL=1.25Ω,

RGEN=3Ω

Turn-Off Fall Time

Turn-On DelayTime

IS=1A,VGS=0V

VDS=5V, ID=12A

Total Gate Charge

Gate Source Charge

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

DYNAMIC PARAMETERS

RDS(ON)

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

IDSS

µA

Gate Threshold Voltage

VDS=VGS ID=250µA

VDS=24V, VGS=0V

VDS=0V, VGS= ±20V

Zero Gate Voltage Drain Current

Gate-Body leakage current

N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

VGS=4.5V, ID=5A

Drain-Source Breakdown Voltage

On state drain current

ID=250µA, VGS=0V

VGS=4.5V, VDS=5V

Pulsed Body-Diode Current

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/µs

VGS=10V, ID=12A

Reverse Transfer Capacitance

IF=12A, dI/dt=100A/µs

Ω

A: The value of R θJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends

on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it.

B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.

D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The SOA

curve provides a single pulse rating.

G. The maximum current rating is limited by bond-wires.

*This device is guaranteed green after data code 8X11 (Sep 1

ST 2008).

Rev3: Oct 2008

Alpha & Omega Semiconductor, Ltd.

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