AOD609_09 datasheet(2/9 Pages) AOSMD

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AOD609

Symbol

Min

Typ

Max

Units

BVDSS

TJ=55°C

IGSS

±100

VGS(th)

1.7

2.5

ID(ON)

TJ=125°C

gFS

VSD

0.76

Ciss

516

650

Coss

Crss

4.6

6.9

Ω

Qg (10V)

8.3

10.8

Qgs

2.3

Qgd

1.6

tD(on)

6.4

3.6

tD(off)

16.2

6.6

trr

Qrr

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/µs

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

IF=12A, dI/dt=100A/µs

VGS=0V, VDS=20V, f=1MHz

Output Capacitance

Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

IDSS

Zero Gate Voltage Drain Current

VDS=40V, VGS=0V

N Channel Electrical Characteristics (T J=25°C unless otherwise noted)

Parameter

Conditions

STATIC PARAMETERS

µA

Gate-Body leakage current

VDS=0V, VGS= ±20V

Ω

Gate Threshold Voltage

VDS=VGS ID=250µA

On state drain current

VGS=10V, VDS=5V

RDS(ON)

Static Drain-Source On-Resistance

Forward Transconductance

VGS=4.5V, ID=8A

VDS=5V, ID=12A

IS=1A,VGS=0V

VGS=10V, ID=12A

Diode Forward Voltage

VGS=10V, VDS=20V, RL=1.4Ω,

RGEN=3Ω

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Total Gate Charge

VGS=10V, VDS=20V,

ID=12A

Input Capacitance

VGS=0V, VDS=0V, f=1MHz

SWITCHING PARAMETERS

Reverse Transfer Capacitance

Gate resistance

A: The value of RθJA is measured with the device in a still air environment with TA =25°C. The power dissipation PDSM and current rating IDSM are based

on TJ(MAX)=150°C, using the steady state junction-to-ambient thermal resistance.

B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation lim

for cases where additional heatsinking is used.

C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.

D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.

G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

H. The maximum current rating is limited by bond-wires.

*This device is guaranteed green after data code 8X11 (Sep 1

ST 2008).

Rev4: Aug 2009

Alpha & Omega Semiconductor, Ltd.

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