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CSD18503KCS Arkusz danych(PDF) 4 Page - Texas Instruments

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Numer części CSD18503KCS
Szczegółowy opis  40-V, N-Channel NexFET Power MOSFETs
PDF  8 Pages
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Producent  TI [Texas Instruments]
Strona internetowa  http://www.ti.com
Logo TI - Texas Instruments

CSD18503KCS Arkusz danych(HTML) 4 Page - Texas Instruments

  CSD18503KCS Datasheet HTML 1Page - Texas Instruments CSD18503KCS Datasheet HTML 2Page - Texas Instruments CSD18503KCS Datasheet HTML 3Page - Texas Instruments CSD18503KCS Datasheet HTML 4Page - Texas Instruments CSD18503KCS Datasheet HTML 5Page - Texas Instruments CSD18503KCS Datasheet HTML 6Page - Texas Instruments CSD18503KCS Datasheet HTML 7Page - Texas Instruments CSD18503KCS Datasheet HTML 8Page - Texas Instruments  
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0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
−75
−25
25
75
125
175
TC - Case Temperature (ºC)
VGS = 4.5V
VGS = 10V
ID =75A
G001
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
VSD − Source-to-Drain Voltage (V)
TC = 25°C
TC = 125°C
G001
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
−75
−25
25
75
125
175
TC - Case Temperature (ºC)
ID = 250uA
G001
0
2
4
6
8
10
12
14
16
0
2
4
6
8
10
12
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16
18
20
VGS - Gate-to- Source Voltage (V)
TC = 25°C Id = 75A
TC = 125ºC Id = 75A
G001
0
2
4
6
8
10
0
5
10
15
20
25
30
Qg - Gate Charge (nC)
ID = 75A
VDS = 20V
G001
10
100
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10000
50000
0
10
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40
VDS - Drain-to-Source Voltage (V)
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
G001
CSD18503KCS
SLPS368 – SEPTEMBER 2012
www.ti.com
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 4. Gate Charge
Figure 5. Capacitance
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 6. Threshold Voltage vs. Temperature
Figure 7. On-State Resistance vs. Gate-to-Source Voltage
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 8. Normalized On-State Resistance vs. Temperature
Figure 9. Typical Diode Forward Voltage
4
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Product Folder Links: CSD18503KCS



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