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CSD18534KCS Arkusz danych(PDF) 4 Page - Texas Instruments

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Numer części CSD18534KCS
Szczegółowy opis  60-V, N-Channel NexFET Power MOSFETs
PDF  8 Pages
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Producent  TI [Texas Instruments]
Strona internetowa  http://www.ti.com
Logo TI - Texas Instruments

CSD18534KCS Arkusz danych(HTML) 4 Page - Texas Instruments

  CSD18534KCS Datasheet HTML 1Page - Texas Instruments CSD18534KCS Datasheet HTML 2Page - Texas Instruments CSD18534KCS Datasheet HTML 3Page - Texas Instruments CSD18534KCS Datasheet HTML 4Page - Texas Instruments CSD18534KCS Datasheet HTML 5Page - Texas Instruments CSD18534KCS Datasheet HTML 6Page - Texas Instruments CSD18534KCS Datasheet HTML 7Page - Texas Instruments CSD18534KCS Datasheet HTML 8Page - Texas Instruments  
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0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
−75
−25
25
75
125
175
TC - Case Temperature (ºC)
VGS = 4.5V
VGS = 10V
ID =40A
G001
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
VSD − Source-to-Drain Voltage (V)
TC = 25°C
TC = 125°C
G001
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
−75
−25
25
75
125
175
TC - Case Temperature (ºC)
ID = 250uA
G001
0
4
8
12
16
20
24
28
32
0
2
4
6
8
10
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20
VGS - Gate-to- Source Voltage (V)
TC = 25°C Id = 40A
TC = 125ºC Id = 40A
G001
0
2
4
6
8
10
0
2
4
6
8
10
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Qg - Gate Charge (nC)
ID = 40A
VDS = 30V
G001
10
100
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10000
0
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60
VDS - Drain-to-Source Voltage (V)
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
G001
CSD18534KCS
SLPS383 – SEPTEMBER 2012
www.ti.com
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 4. Gate Charge
Figure 5. Capacitance
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 6. Threshold Voltage vs. Temperature
Figure 7. On-State Resistance vs. Gate-to-Source Voltage
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 8. Normalized On-State Resistance vs. Temperature
Figure 9. Typical Diode Forward Voltage
4
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Product Folder Links: CSD18534KCS



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