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APT10035JFLL Arkusz danych(PDF) 2 Page - Advanced Power Technology |
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APT10035JFLL Arkusz danych(HTML) 2 Page - Advanced Power Technology |
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2 / 2 page ![]() APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 SOT-227 (ISOTOP®) Package Outline 31.5 (1.240) 31.7 (1.248) Dimensions in Millimeters and (Inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) * Source Drain Gate * r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) * Source Source terminals are shorted internally. Current handling capability is equal for either Source terminal. ADV ANCE TECHNICAL INFORMA TION DYNAMIC CHARACTERISTICS APT10035JFLL SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.]) Peak Diode Recovery dv/dt 5 Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/µs) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/µs) Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/µs) Symbol IS ISM VSD dv/ dt trr Qrr IRRM UNIT Amps Volts V/ns ns µC Amps Symbol Ciss Coss Crss Qg Qgs Qgd td(on) t r td(off) t f Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C RG = 0.6W MIN TYP MAX 5300 870 174 203 31 135 15 6 31 6 UNIT pF nC ns MIN TYP MAX 25 100 1.3 18 Tj = 25°C 320 Tj = 125°C 650 Tj = 25°C 1.9 Tj = 125°C 5.4 Tj = 25°C 13 Tj = 125°C 21 THERMAL CHARACTERISTICS Symbol RqJC RqJA MIN TYP MAX 0.24 40 UNIT °C/W Characteristic Junction to Case Junction to Ambient 1 Repetitive Rating: Pulse width limited by maximum junction 3 See MIL-STD-750 Method 3471 temperature. 4 Starting Tj = +25°C, L = 9.6mH, RG = 25W, Peak IL = 25A 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 5dv/ dt numbers reflect the limitations of the test circuit rather than the device itself. I S £ -I D [Cont.] di/ dt £ 700A/µs V R £ V DSS T J £ 150 °C APT Reserves the right to change, without notice, the specifications and information contained herein. |
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