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MMDF2C01HD Arkusz danych(PDF) 6 Page - Motorola, Inc

Numer części MMDF2C01HD
Szczegółowy opis  COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS
PDF  12 Pages
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Producent  MOTOROLA [Motorola, Inc]
Strona internetowa  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MMDF2C01HD Arkusz danych(HTML) 6 Page - Motorola, Inc

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MMDF2C01HD
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Motorola TMOS Power MOSFET Transistor Device Data
N–Channel
P–Channel
400
800
1200
2000
1600
8
0
8
12
VGS
VDS
4
4
TJ = 25°C
Ciss
Coss
Crss
VDS = 0 V
VGS = 0 V
0
Ciss
Crss
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
RG, GATE RESISTANCE (OHMS)
0.1
10
100
100
10
1
VDD = 6 V
ID = 4 A
VGS = 4.5 V
TJ = 25°C
tr
tf
td(off)
td(on)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
10
8
6
4
2
0
0
4
2
0
QT, TOTAL CHARGE (nC)
5
3
1
2
4
6
8
10
ID = 4 A
TJ = 25°C
VDS
VGS
Q2
Q3
Q1
1
QT
400
800
1200
2000
1600
8
0
8
12
VGS
VDS
4
4
TJ = 25°C
VDS = 0 V
VGS = 0 V
0
Crss
Ciss
Coss
Crss
Ciss
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (Volts)
Figure 7. Capacitance Variation
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
10
8
6
4
2
0
0
4
2
0
QT, TOTAL CHARGE (nC)
5
3
1
2
4
6
8
10
ID = 2 A
TJ = 25°C
VDS
VGS
QT
Q2
Q3
Q1
RG, GATE RESISTANCE (OHMS)
1
10
100
1000
100
10
VDD = 6 V
ID = 2 A
VGS = 4.5 V
TJ = 25°C
tr
tf
td(off)
td(on)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance



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