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ACTPD1M16 Arkusz danych(PDF) 6 Page - Aeroflex Circuit Technology |
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ACTPD1M16 Arkusz danych(HTML) 6 Page - Aeroflex Circuit Technology |
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6 / 9 page ![]() Aeroflex Circuit Technology SCD3750 REV A 8/31/98 Plainview NY (516) 694-6700 6 OPERATIONS OPERATIONS DUAL CAS Two CAS pins (LCAS and UCAS) are provided to give independent control of the 16 data-I/O pins (I/O0-15), with LCAS corresponding to I/O0-7 and UCAS corresponding to I/O8-15. For read or write cycles, the column address is latched on the first xCAS falling edge. Each xCAS going low enables its corresponding I/Ox pin with data associated with the column address latched on the first falling xCAS edge. All address setup and hold parameters are referenced to the first falling xCAS edge. The delay time from xCAS low to valid data out (see parameter tCAC) is measured form each individual xCAS to its corresponding I/Ox pin. In order to latch in a new column address, both xCAS pins must be brought high. The column-precharge time (see parameter tCP ) is measured from the last xCAS rising edge to the first xCAS falling edge of the new cycle. Keeping a column address valid while toggling xCAS requires a minimum setup time, tCLCH. During tCLCH at least one xCAS must be brought low before the other xCAS is taken high. For early-write cycles, the data is latched on the first xCAS falling edge. Only the I/Os that have the corresponding xCAS low are written into. Each xCAS must meet tCAS minimum in order to ensure writing into the storage cell. To latch a new address and new data, all xCAS pins must be high and meet tCP. PAGE MODE Page-mode operation allows faster memory access by keeping the same row address while selecting random column addresses. The time for row-address setup and hold and address multiplex is eliminated. The maximum number of columns that can be accessed is determined by the maximum RAS low time and the xCAS page-mode cycle time used. With minimum xCAS page-cycle time, all columns can be accessed without intervening RAS cycles. Unlike conventional page-mode DRAMs, the column address buff-ers in this device are activated on the falling edge of RAS. The buffers act as transparent or flow-through latches while xCAS is high. The falling edge of the first xCAS latches the column addresses. This feature allows the devices to operate at a higher data bandwidth than conventional page-mode parts because data retrieval begins as soon as the column address is valid rather than when xCAS transitions low. This performance improvement is referred to as enhanced page mode. A valid column address may be presented immediately after tRAH (row-address hold time) has been satisfied, usually well in advance of the falling edge of xCAS. In this case, data is obtained after tCAC maximum (access time from xCAS low) if tAA maximum (access time from column address) has been satisfied. In the event that column addresses for the next page cycle are valid at the time xCAS goes high, minimum access time for the next cycle is determined by tCPA (access time from rising edge of the last xCAS). ADDRESS: A0-9 Twenty address bits are required to decode 1 of 1048576 storage cell locations. For the ACTPD1M16, 10 row-address bits are set up on A0 through A9 and latched onto the chip by RAS. Ten, column-address bits are set up on A0 through A9 and latched onto the chip by the first xCAS. All addresses must be stable on or before the falling edge of RAS and xCAS. RAS is similar to a chip enable in that it activates the sense amplifiers as well as the row decoder. xCAS is used as a chip select, activating its correspond-ing output buffer and latching the address bits into the column-address buffers. |
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