MMDF3207

2

Motorola TMOS Power MOSFET Transistor Device Data

Characteristics

Symbol

Maximum

Unit

Drain–to–Source Voltage

Drain–to–Gate Voltage (RGS = 1.0 MW)

Gate–to–Source Voltage — Continuous

VDSS

VDGR

VGS

20

12

±12

V

1 Inch Square @

10 seconds on

FR–4 or G–10 PCB

Thermal Resistance — Junction to Ambient

Total Power Dissipation @ TA = 25°C

Linear Derating Factor

Drain Current — Continuous @ TA = 25°C

RTHJA

PD

ID

ID

IDM

62.5

2.0

16

7.8

5.7

40

°C/W

Watts

mW/

°C

A

A

A

1 Inch Square @

Steady State on

FR–4 or G–10 PCB

Thermal Resistance — Junction to Ambient

Total Power Dissipation @ TA = 25°C

Linear Derating Factor

Drain Current — Continuous @ TA = 25°C

RTHJA

PD

ID

ID

IDM

98

1.28

10.2

6.2

4.6

35

°C/W

Watts

mW/

°C

A

A

A

Minimum Pad @

Steady State on

FR–4 or G–10 PCB

Thermal Resistance — Junction to Ambient

Total Power Dissipation @ TA = 25°C

Linear Derating Factor

Drain Current — Continuous @ TA = 25°C

RTHJA

PD

ID

ID

IDM

166

0.75

6.0

4.8

3.5

30

°C/W

Watts

mW/

°C

A

A

A

Operating and Storage Temperature Range

TJ, Tstg

–55 to 150

°C

(1) Repetitive rating; pulse width limited by maximum junction temperature.