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ACE6428B Arkusz danych(PDF) 2 Page - ACE Technology Co., LTD. |
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ACE6428B Arkusz danych(HTML) 2 Page - ACE Technology Co., LTD. |
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2 / 8 page ![]() ACE6428B N-Channel Enhancement Mode Field Effect Transistor VER 1.2 2 Packaging Type DFN5*6-8L-EP Ordering information ACE6428B XX + H Electrical CharacteristicsTA=25 OC unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250uA 30 V Zero Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 uA Gate Leakage Current IGSS VGS=±20V, VDS=0V 100 nA Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=20A 5.7 10 m Ω VGS=4.5V, ID=20A 7.9 14.5 Gate Threshold Voltage VGS(th) VDS=VGS, IDS=250uA 1.2 1.9 2.5 V Forward Transconductance gFS VDS=5V, ID=15A 25 S Diode Forward Voltage VSD ISD=2A, VGS=0V 0.71 1.0 V Maximum Body-Diode Continuous Current IS 2 A Switching Total Gate Charge Qg VDS=15V, ID=20A VGS=5V 16 20.8 nC Gate-Source Charge Qgs 5 6.5 Gate-Drain Charge Qgd 3 3.9 Turn-On Delay Time Td(on) VDS=15V, VGS=10V RGEN=6Ω, RL=15Ω 17 34 ns Turn-On Rise Time tf 5 10 Turn-Off Delay Time td(off) 50 100 Turn-Off Fall Time tf 10 20 PN : DFN5*6-8L-EP Pb - free Halogen - free |
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