MPF930 MPF960 MPF990

3

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Figure 3. On Voltage versus Temperature

Figure 4. Capacitance Variation

Figure 5. Transfer Characteristic

Figure 6. Output Characteristic

VGS = 10 V

VDS, DRAIN – SOURCE VOLTAGE (VOLTS)

VGS, GATE – SOURCE VOLTAGE (VOLTS)

10

5.0

2.0

1.0

0.5

0.2

0.1

–55

–15

25

65

105

0

0.9

0.6

0.3

1.2

1.8

1.5

0

1.0

2.0

3.0

4.0

5.0

VDS, DRAIN – SOURCE VOLTAGE (VOLTS)

2.4

2.1

1.2

0.8

0.4

1.6

2.4

2.0

2.8

6.0

7.0

8.0

9.0

10

0

5.0

10

20

30

40

50

145

–35

+5.0

45

85

125

TJ, JUNCTION TEMPERATURE (°C)

0

10

203040

50

0

60

40

20

80

120

100

160

140

200

180

5.0

0

VGS = 0 V

Coss

Ciss

Crss

VDS = 10 V

9.0 V

8.0 V

7.0 V

6.0 V

5.0 V

4.0 V

VGS = 10 V

Figure 7. Saturation Characteristic

VDS, DRAIN – SOURCE VOLTAGE (VOLTS)

1.2

0.8

0.4

1.6

2.4

2.0

2.8

1.0

2.0

3.0

4.0

5.0

0.5

0

0.2

VGS = 10 V

9.0 V

8.0 V

7.0 V

6.0 V

5.0 V

4.0 V

3.0 V