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PIC18F23K20 Arkusz danych(PDF) 13 Page - Microchip Technology |
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PIC18F23K20 Arkusz danych(HTML) 13 Page - Microchip Technology |
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13 / 42 page ![]() © 2009 Microchip Technology Inc. Advance Information DS41297F-page 13 PIC18F2XK20/4XK20 3.0 DEVICE PROGRAMMING Programming includes the ability to erase or write the various memory regions within the device. In all cases, except high-voltage ICSP Bulk Erase, the EECON1 register must be configured in order to operate on a particular memory region. When using the EECON1 register to act on code memory, the EEPGD bit must be set (EECON1<7> = 1) and the CFGS bit must be cleared (EECON1<6> = 0). The WREN bit must be set (EECON1<2> = 1) to enable writes of any sort (e.g., erases) and this must be done prior to initiating a write sequence. The FREE bit must be set (EECON1<4> = 1) in order to erase the program space being pointed to by the Table Pointer. The erase or write sequence is initiated by setting the WR bit (EECON1<1> = 1). It is strongly recommended that the WREN bit only be set immediately prior to a program or erase. 3.1 ICSP Erase 3.1.1 HIGH-VOLTAGE ICSP BULK ERASE Erasing code or data EEPROM is accomplished by configuring two Bulk Erase Control registers located at 3C0004h and 3C0005h. Code memory may be erased portions at a time, or the user may erase the entire device in one action. Bulk Erase operations will also clear any code-protect settings associated with the memory block erased. Erase options are detailed in Table 3-1. If data EEPROM is code-protected (CPD = 0), the user must request an erase of data EEPROM (e.g., 0084h as shown in Table 3-1). TABLE 3-1: BULK ERASE OPTIONS The actual Bulk Erase function is a self-timed operation. Once the erase has started (falling edge of the 4th PGC after the NOP command), serial execution will cease until the erase completes (parameter P11). During this time, PGC may continue to toggle but PGD must be held low. The code sequence to erase the entire device is shown in Table 3-2 and the flowchart is shown in Figure 3-1. TABLE 3-2: BULK ERASE COMMAND SEQUENCE FIGURE 3-1: BULK ERASE FLOW Description Data (3C0005h:3C0004h) Chip Erase 0F8Fh Erase User ID 0088h Erase Data EEPROM 0084h Erase Boot Block 0081h Erase Config Bits 0082h Erase Code EEPROM Block 0 0180h Erase Code EEPROM Block 1 0280h Erase Code EEPROM Block 2 0480h Erase Code EEPROM Block 3 0880h Note: A Bulk Erase is the only way to reprogram code-protect bits from an “on” state to an “off” state. 4-Bit Command Data Payload Core Instruction 0000 0E 3C MOVLW 3Ch 0000 6E F8 MOVWF TBLPTRU 0000 0E 00 MOVLW 00h 0000 6E F7 MOVWF TBLPTRH 0000 0E 05 MOVLW 05h 0000 6E F6 MOVWF TBLPTRL 1100 0F 0F Write 0Fh to 3C0005h 0000 0E 3C MOVLW 3Ch 0000 6E F8 MOVWF TBLPTRU 0000 0E 00 MOVLW 00h 0000 6E F7 MOVWF TBLPTRH 0000 0E 04 MOVLW 04h 0000 6E F6 MOVWF TBLPTRL 1100 8F 8F Write 8F8Fh TO 3C0004h to erase entire device. 0000 00 00 NOP 0000 00 00 Hold PGD low until erase completes. Start Done Write 8F8Fh to 3C0004h to Erase Entire Device Write 0F0Fh Delay P11 + P10 Time to 3C0005h |
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