©2013 Silicon Storage Technology, Inc.

DS75056A

04/13

Data Sheet

www.microchip.com

Features

• High Gain:

– Typically 32 dB gain across 2.4–2.5 GHz over tempera-

ture 0°C to +85°C

• High linear output power:

– >29 dBm P1dB

- Please refer to “Absolute Maximum Stress Ratings” on

page 5

– Meets 802.11g OFDM ACPR requirement up to 25 dBm

– Added EVM~4% up to 23 dBm for

54 Mbps 802.11g signal

– Meets 802.11b ACPR requirement up to 25 dBm

• High power-added efficiency/Low operating cur-

rent for both 802.11g/b applications

• Low idle current

• High-speed power-up/down

– Turn on/off time (10%-90%) <100 ns

– Typical power-up/down delay with driver delay included

<200 ns

• High temperature stability

– ~1 dB gain/power variation between 0°C to +85°C

– ~1 dB detector variation over 0°C to +85°C

• Low shut-down current (~1 µA)

• On-chip power detection

• 25 dB dynamic range on-chip power detection

• Simple input/output matching

• Packages available

– 16-contact VQFN (3mm x 3mm)

• All non-Pb (lead-free) devices are RoHS compliant

Applications

• WLAN (IEEE 802.11b/g/n)

•Home RF

• Cordless phones

• 2.4 GHz ISM wireless equipment

2.4 GHz High-Power and High-Gain Power Amplifier

SST12LP15A

The SST12LP15A is a high-power and high-gain power amplifier based on the

highly-reliable InGaP/GaAs HBT technology. Easily configured for high-power

applications with superb power-added efficiency while operating over the 2.4-2.5

GHz frequency band, it typically provides 32 dB gain with 26% power-added effi-

25 dBm for 802.11b. The SST12LP15A has excellent linearity while meeting

802.11g spectrum mask at 25 dBm. The power amplifier IC features easy board-

level usage along with high-speed power-up/down control and is offered in 16-

contact VQFN package