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SST12LP20 Arkusz danych(PDF) 2 Page - Microchip Technology |
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SST12LP20 Arkusz danych(HTML) 2 Page - Microchip Technology |
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2 / 13 page ![]() ©2013 Silicon Storage Technology, Inc. DS70005049C 05/13 2 2.4 GHz High-Efficiency, High-Gain Power Amplifier SST12LP20 Data Sheet Product Description SST12LP20 is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT technology. The device’s input and output ports are matched to 50 Ω internally. Both input and output ports are DC- decoupled and do not require DC-blocking capacitors. This helps reduce the system board’s Bill of Materials (BOM) cost. The SST12LP20 is a 2.4 GHz high-efficiency Power Amplifier designed in compliance with IEEE 802.11b/g/n applications. It typically provides 30 dB gain with 28% power-added efficiency (PAE) @ POUT = 21 dBm for 802.11b/g. The SST12LP20 has excellent linearity, typically ~3% added EVM at 18 dBm output power which is essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 21 dBm and 802.11b spectrum mask at 21 dBm. The SST12LP20 also features easy board-level usage along with high-speed power-up/down control through a single combined reference voltage pin. Ultra-low reference current (total IREF ~2 mA) makes the SST12LP20 controllable by an on/off switching signal directly from the baseband chip. These fea- tures, coupled with low operating current, make the SST12LP20 ideal for the final stage power amplifi- cation in battery-powered 802.11b/g/n WLAN transmitter applications. The SST12LP20 has an excellent on-chip, single-ended power detector, which features wide-range (>15 dB) with dB-wise linear. The excellent on-chip power detector provides a reliable solution to board-level power control. The SST12LP20 is offered in 8-contact USON package. See Figure 2 for pin assignments and Table 1 for pin descriptions. |
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