PJET3V3TS datasheet(1/5 Pages) PANJIT

Numer części	PJET3V3TS

Szczegółowy opis	SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS

PDF	5 Pages

Scroll/Zoom	100%

Producent	PANJIT [Pan Jit International Inc.]

Strona internetowa	http://www.panjit.com.tw

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PAGE . 1

June 20,2013-REV.00

PJET3V3TS

VOLTAGE

IPP

3.3 Volts

5.5 Amperes

SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS

• Small package for use in portable electronics

• Suitable replacement for MLV’S in ESD protection applications

• Low clamping voltage and leakage current

• Lead free in comply with EU RoHS 2011/65/EU directives

• Green molding compound as per IEC61249 Std. . (Halogen Free)

MAXIMUM RATINGSAND ELECTRICALCHATACTERISTICS

• Case : SOD-523 plastic

• Terminals : Solderable per MIL-STD-750,Method 2026

• Approx Weight : 0.0014 grams

• Marking : QN

APPLICATIONS

FEATURES

1

2

Cathode

Anode

ELECTRICALCHATACTERISTICS

NOTES :

1. Non-repetitive current pulse.

2. Mounted on copper pads to each terminal.

3. Peak pulse power waveform is 8/20

s.

4. A transient suppressor is selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than the DC

or continuous peak operating voltage level.

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Units

Reverse Stand-Off Voltage (Notes 4)

V

RWM

--

-

3.3

V

Reverse Breakdown Voltage

V

BR

I

BR=1mA

5.25

-

5.95

V

Reverse Leakage Current

I

R

V

R=3.3V

-

0.5

A

Clamping Voltage (8/20

s)

V

C

I

PP=5.5A

-

7.9

V

Off State Junction Capacitance

C

J

0Vdc Bias, f=1MHz

-

40

pF

Rating

Symbol

Value

Units

Peak Pulse Current on 8/20

s waveform (Notes 1,2,3)

I

PPM

5.5

Amps

ESD Voltage Air Mode

V

ESD

25

KV

ESD Voltage Contact Mode

V

ESD

30

KV

Operating Temperature And Storage Temperature

T

J,TSTG

-55 to +150

OC

0.20 MIN.

0.034(0.85)

0.029(0.75)

0.014(0.35)

0.009(0.25)

0.006(0.15)

0.002(0.05)

0.026(0.65)

0.021(0.55)

0.067(1.70)

0.059(1.50)

0.050(1.25)

0.045(1.15)

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