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BTB12 Arkusz danych(PDF) 5 Page - STMicroelectronics

Numer części BTB12
Szczegółowy opis  12 A Snubberless™ logic level and standard triacs
PDF  12 Pages
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BTB12 Arkusz danych(HTML) 5 Page - STMicroelectronics

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BTA12, BTB12, T12xx
Characteristics
5/12
Figure 7.
Non-repetitive surge peak on-state
current for a sinusoidal pulse with
width tp < 10 ms and corresponding
value of I2t
Figure 8.
Figure 8: Relative variation of gate
trigger current, holding current and
latching current versus junction
temperature (typical values)
0.01
0.10
1.00
10.00
10
100
1000
I
(A), I t (A s)
TSM
22
t (ms)
p
T initial=25°C
j
ITSM
dI/dt limitation:
50A/µs
I t
2
-40
-20
0
20
40
60
80
100
120
140
0.0
0.5
1.0
1.5
2.0
2.5
T (°C)
j
I,I ,I [T ] /
GT H L
j
I
,I ,I [T =25°C]
GT H L
j
IGT
IH & IL
Figure 9.
Relative variation of critical rate of
decrease of main current versus
(dV/dt)c (typical values)
(BW/CW/T1210/T1235)
Figure 10.
Relative variation of critical rate of
decrease of main current versus
(dV/dt)c (typical values) (TW)
0.1
1.0
10.0
100.0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
T1210/SW
(dV/dt)c (V/µs)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
T1235/T1250/CW/BW
C
B
0.1
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.0
10.0
100.0
(dV/dt)c (V/µs)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
TW
Figure 11.
Relative variation of critical rate of
decrease of main current versus
junction temperature
Figure 12.
D2PAK thermal resistance junction
to ambient versus copper surface
under tab (printed circuit board
FR4, copper thickness: 35 µm)
0
25
50
75
100
125
0
1
2
3
4
5
6
(dI/dt)c [T ] /
pecified]
j
(dI/dt)c [T s
j
T (°C)
j
0
4
8
1216
20
2428
32
3640
0
10
20
30
40
50
60
70
80
S(cm²)
R
(°C/W)
th(j-a)
DPAK
2



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