BA679 datasheet(1/5 Pages) VISHAY

Numer części	BA679

Szczegółowy opis	RF PIN Diodes - Single in MiniMELF SOD-80

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Producent	VISHAY [Vishay Siliconix]

Strona internetowa	http://www.vishay.com

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BA679, BA679S

www.vishay.com

Vishay Semiconductors

Rev. 1.8, 16-May-12

1

Document Number: 85529

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

RF PIN Diodes - Single in MiniMELF SOD-80

FEATURES

• Wide frequency range 10 MHz to 1 GHz

• AEC-Q101 qualified

• Material categorization:

For

definitions

of

compliance

please

see

www.vishay.com/doc?99912

APPLICATIONS

• Current

controlled

HF

resistance

in

adjustable

attenuators

MECHANICAL DATA

Case: MiniMELF SOD-80

Weight: approx. 31 mg

Cathode band color: black

Packaging codes/options:

GS18/10K per 13" reel (8 mm tape), 10K/box

GS08/2.5K per 7" reel (8 mm tape), 12.5K/box

PARTS TABLE

PART

TYPE

DIFFERENTIATION

ORDERING CODE

TYPE MARKING

INTERNAL

CONSTRUCTION

REMARKS

BA679

zr > 5 k

BA679-GS18 or BA679-GS08

-

Single diode

Tape and reel

BA679S

zr > 9 k

BA679S-GS18 or BA679S-GS08

-

Single diode

Tape and reel

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PART

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

VR

30

V

Forward continuous current

IF

50

mA

THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Thermal resistance junction to ambient air

on PC board

50 mm x 50 mm x 1.6 mm

RthJA

500

K/W

Junction temperature

Tj

125

°C

Storage temperature range

Tstg

- 55 to + 150

°C

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 20 mA

VF

1V

Reverse current

VR = 30 V

IR

0.05

μA

Diode capacitance

f = 100 MHz, VR = 0 V

CD

0.5

pF

Differential forward resistance

f = 100 MHz, IF = 1.5 mA

rf

50



Reverse impedance

f = 100 MHz, VR = 0 V

BA679

zr

5k



BA679S

zr

9k



Minority carrier lifetime

IF = 10 mA, IR = 10 mA



4μs

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