DocID15696 Rev 3

5/23

STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3

Electrical characteristics

The built-in back-to-back Zener diodes have specifically been designed to enhance not only

the device’s ESD capability, but also to make them safely absorb possible voltage transients

that may occasionally be applied from gate to source. In this respect the Zener voltage is

appropriate to achieve an efficient and cost-effective intervention to protect the device’s

integrity. These integrated Zener diodes thus avoid the usage of external components.

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

Turn-on delay time

(see Figure 19)

-17

-

ns

Rise time

-

7

-

ns

Turn-off-delay time

-

32

-

ns

Fall time

-

18

-

ns

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ. Max. Unit

Source-drain current

-

4

A

(1)

1.

Pulse width limited by safe operating area

Source-drain current (pulsed)

-

16

A

(2)

2.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

-

1.6

V

Reverse recovery time

(see Figure 21)

-410

ns

Reverse recovery charge

-

3.5

µC

Reverse recovery current

-

17

A

Reverse recovery time

(see Figure 21)

-516

ns

Reverse recovery charge

-

4.1

µC

Reverse recovery current

-

16

A

Table 8. Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

Gate-source breakdown

voltage

30

-

-

V