MBRF1040CT datasheet(1/2 Pages) TGS

Numer części	MBRF1040CT

Szczegółowy opis	TO-220F Plastic-Encapsulate Diodes

PDF	2 Pages

Scroll/Zoom	100%

Producent	TGS [Tiger Electronic Co.,Ltd]

Strona internetowa	http://www.tgselec.com

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1 / 2 page

A,Nov,2010

TO-220F Plastic-Encapsulate Diodes

MBR

F1030,35,40,45,50CT

SCHOTTKY BARRIER RECTIFIER

FEATURES

 Schottky Barrier Chip

 Guard Ring Die Construction for Transient Protection

 Low Power Loss,High Efficiency

 High Surge Capability

 High Current Capability and Low Forward Voltage Drop

 For Use in Low Voltage, High Frequency Inverters,Free Wheeling,

and Polarity Protection Applications

MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )

Value

Symbol

Parameter

MBR

F10

30CT

MBR

F10

35CT

MBR

F10

40CT

MBR

F10

45CT

MBR

F10

50CT

Unit

VRRM

Peak repetitive reverse voltage

VRWM

Working peak reverse voltage

VR

DC blocking voltage

30

35

40

45

50

V

VR(RMS)

RMS reverse voltage

21

24.5

28

31.5

35

V

IO

Average rectified output current

10

A

IFSM

Non-Repetitive peak forward surge current

8.3ms half sine wave

120

A

PD

Power dissipation

2

W

RΘJA

Thermal resistance from junction to ambient

50

℃/W

Tj

Junction temperature

125

℃

Tstg

Storage temperature

-55~+150

℃

TO-220F

1. ANODE

2. CATHODE

3. ANODE

TIGER ELECTRONIC CO.,LTD

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MBRF1040CT Arkusz danych(PDF) 1 Page - Tiger Electronic Co.,Ltd

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