2N6053_12 datasheet(1/3 Pages) COMSET

Numer części	2N6053

Szczegółowy opis	POWER COMPLEMENTARY SILICON TRANSISTORS

PDF	3 Pages

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Producent	COMSET [Comset Semiconductor]

Strona internetowa	http://comset.halfin.com

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PNP 2N6053

17/10/2012

COMSET SEMICONDUCTORS

1 | 3

P

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WE

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R C

CO

OM

MP

PL

LE

EM

ME

EN

NT

TA

AR

RY

Y S

SIIL

LIIC

CO

ON

N T

TR

RA

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SIIS

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The 2N6053 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted

in Jedec TO-3 metal case.

They are inteded for use in power linear and low frequency switching applications.

The complementary NPN types are 2N6055.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

VCBO

Collector-Base Voltage

IE=0

2N6053

-60

V

VCEO

Collector-EmitterVoltage

IB=0

2N6053

-60

V

VEBO

Emitter-Base Voltage

IC=0

-5.0

V

IC

Collector Current

-8

A

ICM

Collector Peak Current

-16

A

IB

Base Current

-120

mA

PT

Power Dissipation

@ TC < 25°

100

W

TJ

Junction

Storage Temperature

200

°C

Ts

-65 to +200

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

RthJ-C

Thermal Resistance, Junction to Case

1.17

°C/W

Podobny numer części - 2N6053_12

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Mospec Semiconductor	2N6053	172Kb / 4P	POWER TRANSISTORS(8A,100W)
List of Unclassifed Man...	2N6053	347Kb / 8P	Power Transistors
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Savantic, Inc.	2N6053	112Kb / 3P	Silicon PNP Power Transistors
Comset Semiconductor	2N6053	135Kb / 3P	COMPLEMENTARY POWER DARLINGTON

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Podobny opis - 2N6053_12

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Motorola, Inc	D44E	84Kb / 2P	COMPLEMENTARY SILICON POWER TRANSISTORS
Seme LAB	2N6299SMD	33Kb / 2P	COMPLEMENTARY SILICON POWER TRANSISTORS
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Central Semiconductor C...	2N3055	493Kb / 2P	COMPLEMENTARY SILICON POWER TRANSISTORS
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ON Semiconductor	D44H	102Kb / 5P	Complementary Silicon Power Transistors November, 2014 ??Rev. 13
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