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BU911 Arkusz danych(PDF) 1 Page - Comset Semiconductor |
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BU911 Arkusz danych(HTML) 1 Page - Comset Semiconductor |
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1 / 3 page ![]() NPN BU911 21/11/2012 COMSET SEMICONDUCTORS 1 | 3 HIGH VOLTAGE POWER DARLINGTON The BU911 are high voltage, silicon NPN transistors in monolithic Darlington mounted in Jedec TO-220 plastic package. They are designed for applications such as electronic ignition, DC and AD motor controls, solenoid drivers, etc. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage 400 V VCES Collector-Emitter Voltage Vbe=0 450 V VEBO Emitter-Base Voltage 5 V IC Collector Current 6 A ICM Collector Current Peak 10 A IB Base Current 1 A PD Total Device Dissipation @ TC = 25° 60 W TJ Junction Temperature 150 °C TStg Storage Temperature Range -65 to +150 °C THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-c Thermal Resistance, Junction to case 2.08 °C/W |
Podobny numer części - BU911_12 |
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Podobny opis - BU911_12 |
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