STPS30M100ST datasheet(4/10 Pages) STMICROELECTRONICS

4 / 10 page

Characteristics

STPS30M100S

4/10

Doc ID 15523 Rev 3

Figure 8.

Non repetitive surge peak forward

current versus overload duration

(maximum values) (TO-220FPAB)

Figure 9.

Relative variation of thermal

impedance junction to case versus

pulse duration (TO-220FPAB)

100

150

200

1.E-03

1.E-02

1.E-01

1.E+00

Tc=25°C

Tc=75°C

Tc=125°C

δ =0.5

IM(A)

t(s)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Single pulse

tp(s)

Zth(j-c)/Rth(j-c)

Figure 10.

Reverse leakage current versus

reverse voltage applied (typical

values)

Figure 11.

Junction capacitance versus

reverse voltage applied (typical

values)

Figure 12.

Forward voltage drop versus

forward current (high level)

Figure 13.

Forward voltage drop versus

forward current (low level)

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

2030

4050

6070

8090

100

IR(mA)

Tj=150°C

Tj=125°C

Tj=25°C

Tj=100°C

Tj=75°C

Tj=50°C

VR(V)

100

1000

10000

100

F=1M H z

Vosc=30m V

Tj=25°C

C(pF)

VR (V)

100

120

140

160

180

200

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

IFM(A)

Tj=25°C

(Maximum values)

Tj=125°C

(Maximum values)

Tj=125°C

(Maximum values)

Tj=125°C

(Typical values)

Tj=125°C

(Typical values)

VFM(V)

0.0

0.2

0.4

0.6

0.8

1.0

Tj=25°C

(Maximum values)

Tj=125°C

(Maximum values)

Tj=125°C

(Maximum values)

Tj=125°C

(Typical values)

Tj=125°C

(Typical values)

(V)

IFM(A)

STPS30M100ST Arkusz danych(PDF) 4 Page - STMicroelectronics

STPS30M100ST Arkusz danych(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10

Arkusz danych Pobierz

Link URL