10.12.2010

QL85I6SA

1 of 1

QL85I6SA

TECHNICAL DATA

Infrared Laser Diode

Features

• AlGaAs laser diode

• Peak Wavelength: 850 nm

• Optical Ouput Power: 5 mW

• Package: 5.6 mm, with Photo Diode

Electrical Connection

Pin Configuration

Bottom View

m-type

PIN

Function

1

LD Cathode

2

LD Anode, PD Cathode

3

PD Anode

Item

Symbol

Value

Unit

CW Output Power

32

mW

LD Reverse Voltage

2

V

PD Reverse Voltage

30

V

Operating Case Temperature

-10 … +60

°C

Storage Temperature

-40 … +85

°C

Item

Symbol

Min.

Typ.

Max.

Unit

Optical Specifications

CW Output Power

-

30

-

mW

Peak Wavelength *

845

850

860

nm

7.0

9.0

12.0

deg

FWHM Beam Divergence

25

29

36

deg

-2.0

-

2.0

deg

Emission Point Accuracy

Angle

-3.0

-

3.0

deg

Astigmatism

15

µm

Electrical Specifications

Threshold Current

5

20

35

mA

Operating Current

50

70

90

mA

Slope Efficiency

η

0.4

0.7

1.0

W/A

Operating Voltage

-

2.0

2.5

V

Monitor Current

0.05

0.2

0.5

mA

* Measuring specifications.

The above specifications are for reference purpose only and subjected to change without prior notice.