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MPC8306S Arkusz danych(PDF) 13 Page - Freescale Semiconductor, Inc |
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MPC8306S Arkusz danych(HTML) 13 Page - Freescale Semiconductor, Inc |
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13 / 70 page ![]() MPC8306S PowerQUICC II Pro Integrated Communications Processor Family Hardware Specifications, Rev. 1 Freescale Semiconductor 13 DDR2 SDRAM The following table provides the PLL lock times. 5.1 Reset Signals DC Electrical Characteristics The following table provides the DC electrical characteristics for the MPC8306S reset signals mentioned in Table 9. 6DDR2 SDRAM This section describes the DC and AC electrical specifications for the DDR2 SDRAM interface of the MPC8306S. Note that DDR2 SDRAM is GVDD(typ) = 1.8 V. 6.1 DDR2 SDRAM DC Electrical Characteristics The following table provides the recommended operating conditions for the DDR2 SDRAM component(s) of the MPC8306S when GVDD(typ) = 1.8 V. Table 10. PLL Lock Times Parameter/Condition Min Max Unit Note PLL lock times — 100 s— Table 11. Reset Signals DC Electrical Characteristics Characteristic Symbol Condition Min Max Unit Note Output high voltage VOH IOH = –6.0 mA 2.4 — V 1 Output low voltage VOL IOL = 6.0 mA — 0.5 V 1 Output low voltage VOL IOL = 3.2 mA — 0.4 V 1 Input high voltage VIH —2.0 OVDD +0.3 V 1 Input low voltage VIL —–0.3 0.8 V — Input current IIN 0 V VIN OVDD — ±5 A— Note: 1. This specification applies when operating from 3.3 V supply. Table 12. DDR2 SDRAM DC Electrical Characteristics for GVDD(typ) = 1.8 V Parameter/Condition Symbol Min Max Unit Note I/O supply voltage GVDD 1.7 1.9 V 1 I/O reference voltage MVREF 0.49 GVDD 0.51 GVDD V2 I/O termination voltage VTT MVREF – 0.04 MVREF + 0.04 V 3 Input high voltage VIH MVREF+ 0.125 GVDD +0.3 V — Input low voltage VIL –0.3 MVREF – 0.125 V — Output leakage current IOZ –9.9 9.9 A4 |
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