MTDF1C02HD datasheet(5/14 Pages) MOTOROLA

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MTDF1C02HD

Motorola TMOS Power MOSFET Transistor Device Data

N–Channel

P–Channel

Figure 3. On–Resistance versus

Gate–To–Source Voltage

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

Figure 5. On–Resistance Variation with

Temperature

Figure 3. On–Resistance versus

Gate–To–Source Voltage

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

Figure 5. On–Resistance Variation with

Temperature

TYPICAL ELECTRICAL CHARACTERISTICS

0.4

0.5

0.6

0.3

0.1

0.2

2.0

4.0

8.0

6.0

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

ID = 1.7 A

TJ = 25°C

2.7 V

VGS = 4.5 V

TJ = 25°C

0.05

ID, DRAIN CURRENT (AMPS)

0.15

1.0

2.0

0.09

3.0

4.0

0.11

0.13

0.07

TJ, JUNCTION TEMPERATURE (°C)

– 50

100

150

0.4

1.2

1.6

2.0

VGS = 4.5 V

ID = 0.85 A

125

–25

0.8

VGS, GATE–TO–SOURCE (VOLTS)

0.4

0.3

0.2

0.1

2.0

4.0

6.0

8.0

ID = 1.6 A

TJ = 25°C

ID, DRAIN CURRENT (AMPS)

1.0

0.5

0.4

0.3

0.2

0.1

2.0

3.0

4.0

TJ = 25°C

VGS = 4.5 V

2.7 V

0.6

–25

–50

TJ, JUNCTION TEMPERATURE (°C)

2.0

1.5

1.0

0.5

100

125

150

VGS = 4.5 V

ID = 0.8 A

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