Fig 10. Threshold Voltage

Fig 9. Gate Charge vs. Gate-Source Voltage

Fig 8. Source-Drain Diode Forward Voltage

P

DM

t

1

t

2

Fig 7. Nomalized Effective Transient Thermal Impedance, Junction-to-Amdient

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

0.01

0.1

1

Single Pulse

0.05

Duty Cycle=0.5

0.2

0.1

0.02

@ Notes :

1. R

(t)=62.5

2. Duty Factor, D=t

3. T

(t)

4. Surface Mounted

Square Wave Pulse Duration

[sec]

02

46

8

10

0

5

10

V

I

D

= 1.3A

Q

[nC]

0.0

0.4

0.8

1.2

1.6

2.0

2.4

10

0

10

1

10

2

T

T

J

=25

V

[V]

-50

0

50

100

150

0.0

0.5

1.0

1.5

2.0

I

D

= 250

T

[

SSD2007A

Dual N-CHANNEL

POWER MOSFET