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MP2560DN Arkusz danych(PDF) 2 Page - Monolithic Power Systems

Numer części MP2560DN
Szczegółowy opis  2.5A, 4MHz, 42V Step-Down Converter
PDF  19 Pages
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Producent  MPS [Monolithic Power Systems]
Strona internetowa  http://www.monolithicpower.com
Logo MPS - Monolithic Power Systems

MP2560DN Arkusz danych(HTML) 2 Page - Monolithic Power Systems

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MP2560 – 2.5A, 4MHz, 42V STEP-DOWN CONVERTER
MP2560 Rev. 1.2
www.MonolithicPower.com
2
1/25/2010
MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited.
© 2010 MPS. All Rights Reserved.
ORDERING INFORMATION
Part Number*
Package
Top Marking
Temperature
MP2560DQ
3x3 QFN10
S8YW
MP2560DN
SOIC8E
MP2560DN
–40
°C to +85°C
* For Tape & Reel, add suffix –Z (eg. MP2560DQ–Z). For RoHS Compliant Packaging, add suffix –LF (eg.
MP2560DQ–LF–Z)
** For Tape & Reel, add suffix –Z (eg. MP2560DN–Z). For RoHS Compliant Packaging, add suffix –LF (eg.
MP2560DN–LF–Z)
PACKAGE REFERENCE
TOP VIEW
SW
SW
EN
COMP
FB
1
2
3
4
5
BST
VIN
VIN
FREQ
GND
10
9
8
7
6
EXPOSED PAD
ON BACKSIDE
CONNECT TO GND
SW
EN
COMP
FB
BST
VIN
FREQ
GND
1
2
3
4
8
7
6
5
TOP VIEW
EXPOSED PAD
CONNECT TO GND
ABSOLUTE MAXIMUM RATINGS (1)
Supply Voltage (VIN).....................–0.3V to +45V
Switch Voltage (VSW) ..........................................
............. –0.3V (-7V for < 10ns) to VIN + 0.3V
BST to SW .....................................–0.3V to +6V
All Other Pins.................................–0.3V to +6V
Continuous Power Dissipation… (TA = +25°C)
(2)
3x3 QFN10 ................................................ 2.5W
SOIC8 ........................................................ 2.5W
Junction Temperature...............................150
°C
Lead Temperature ....................................260
°C
Storage Temperature.............. –65°C to +150
°C
Recommended Operating Conditions
(3)
Supply Voltage VIN ...........................4.5V to 42V
Output Voltage VOUT.........................0.8V to 39V
Operating Temperature............. –40
°C to +85°C
Thermal Resistance
(4)
θJA
θJC
3x3 QFN10 ............................. 50 ...... 12...
°C/W
SOIC8 (Exposed Pad) ............ 50 ...... 10...
°C/W
Notes:
1) Exceeding these ratings may damage the device.
2) The maximum allowable power dissipation is a function of the
maximum junction temperature TJ (MAX), the junction-to-
ambient thermal resistance θJA, and the ambient temperature
TA. The maximum allowable continuous power dissipation at
any ambient temperature is calculated by PD (MAX) = (TJ
(MAX)-TA)/θJA. Exceeding the maximum allowable power
dissipation will cause excessive die temperature, and the
regulator will go into thermal shutdown. Internal thermal
shutdown circuitry protects the device from permanent
damage.
3) The device is not guaranteed to function outside of its
operating conditions.
4) Measured on JESD51-7 4-layer board.



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