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AM29F800B Arkusz danych(PDF) 28 Page - Advanced Micro Devices |
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AM29F800B Arkusz danych(HTML) 28 Page - Advanced Micro Devices |
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28 / 39 page ![]() 28 Am29F800B P R E L I M I NARY AC CHARACTERISTICS Erase/Program Operations Notes: 1. Not 100% tested. 2. See the “Erase and Programming Performance” section for more information. Parameter -55 -70 -90 -120 -150 JEDEC Std. Description Unit tAVAV tWC Write Cycle Time (Note 1) Min 55 70 90 120 150 ns tAVWL tAS Address Setup Time Min 0 ns tWLAX tAH Address Hold Time Min 45 45 45 50 50 ns tDVWH tDS Data Setup Time Min 25 30 45 50 50 ns tWHDX tDH Data Hold Time Min 0 ns tOES Output Enable Setup Time Min 0 ns tGHWL tGHWL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns tELWL tCS CE# Setup Time Min 0 ns tWHEH tCH CE# Hold Time Min 0 ns tWLWH tWP Write Pulse Width Min 30 35 45 50 50 ns tWHWL tWPH Write Pulse Width High Min 20 ns tWHWH1 tWHWH1 Programming Operation (Note 2) Byte Typ 7 µs Word Typ 12 tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 1 sec tVCS VCC Setup Time (Note 1) Min 50 µs tRB Recovery Time from RY/BY# Min 0 ns tBUSY Program/Erase Valid to RY/BY# Delay Min 30 30 35 50 55 ns |
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