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STM32F407IG Arkusz danych(PDF) 94 Page - STMicroelectronics

Numer części STM32F407IG
Szczegółowy opis  ARM Cortex-M4 32b MCUFPU, 210DMIPS, up to 1MB Flash/1924KB RAM
PDF  167 Pages
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
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STM32F407IG Arkusz danych(HTML) 94 Page - STMicroelectronics

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Electrical characteristics
STM32F405xx, STM32F407xx
94/167
Doc ID 022152 Rev 2
1.
TBD stands for “to be defined”.
Table 36.
Flash memory programming
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1)
1.
Based on characterization, not tested in production.
Unit
tprog
Word programming time
Program/erase parallelism
(PSIZE) = x 8/16/32
-16
100(2)
2.
The maximum programming time is measured after 100K erase operations.
µs
tERASE16KB Sector (16 KB) erase time
Program/erase parallelism
(PSIZE) = x 8
-
400
800
ms
Program/erase parallelism
(PSIZE) = x 16
-
300
600
Program/erase parallelism
(PSIZE) = x 32
-
250
500
tERASE64KB Sector (64 KB) erase time
Program/erase parallelism
(PSIZE) = x 8
-
1200
2400
ms
Program/erase parallelism
(PSIZE) = x 16
-
700
1400
Program/erase parallelism
(PSIZE) = x 32
-
550
1100
tERASE128KB Sector (128 KB) erase time
Program/erase parallelism
(PSIZE) = x 8
-2
4
s
Program/erase parallelism
(PSIZE) = x 16
-1.3
2.6
Program/erase parallelism
(PSIZE) = x 32
-1
2
tME
Mass erase time
Program/erase parallelism
(PSIZE) = x 8
-16
32
s
Program/erase parallelism
(PSIZE) = x 16
-11
21
Program/erase parallelism
(PSIZE) = x 32
-8
16
Vprog
Programming voltage
32-bit program operation
2.7
-
3.6
V
16-bit program operation
2.1
-
3.6
V
8-bit program operation
1.8
-
3.6
V



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