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QJS0512001 Arkusz danych(PDF) 2 Page - Powerex Power Semiconductors |
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QJS0512001 Arkusz danych(HTML) 2 Page - Powerex Power Semiconductors |
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2 / 2 page ![]() QJS0512001 Single MOSFET Module 120 Amperes/500 Volts Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 2 01/10 Rev. 1 Maximum Ratings, Tj = 25°C unless otherwise specified Ratings Symbol QJS0512001 Units Drain-Source Voltage VDS 500 Volts Drain-Gate Voltage VDGR 500 Volts Gate-Source Voltage VGS ±30 Volts Drain Current (Continuous) at TC = 25°C ID 120 Amperes Drain Current (Continuous) at TC = 100°C ID 75 Amperes Junction Temperature Tj -40 to 150 °C Storage Temperature Tstg -40 to 125 °C Mounting Torque, M6 Terminal Screws — 26 in-lb Mounting Torque, M6 Mounting Screws — 26 in-lb Module Weight (Typical) — 220 Grams V Isolation Voltage VRMS 2500 Volts Static Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Drain-Source Breakdown Voltage V(BR)DSS ID = 500μA, VGS = 0 500 — — Volts Zero Gate Voltage Drain Current IDSS VGS = 0, VDS = 500V — — 20 μA Zero Gate Voltage Drain Current IDSS VGS = 0, VDS = 500V, TC = 125°C — — 200 μA Gate Leakage Current IGSS VDS = 0, VGS = ±20V — — ±20 μA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 500µA 3.0 4.0 5.0 Volts Drain-Source On Resistance RDS(on) ID = 60A, VGS = 10V — 0.022 0.025 Ω Total Gate Charge QG VDD = 400V, ID = 120A, VGS = 10V — 380 530 nC Forward On Voltage Source-Drain Diode VSD ISD = 120A, VGS = 0 — — 1.5 Volts Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c) MOSFET — 0.1 TBD °C/W Contact Thermal Resistance, Rth(c-f) Module — — 0.075 °C/W Thermal Grease Applied |
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