CSD23381F4 datasheet(4/12 Pages) TI1

4 / 12 page

0.7

0.8

0.9

1.1

1.2

1.3

1.4

−75

−25

125

175

TC - Case Temperature (ºC)

VGS = −4.5V, ID = −0.5A

G001

0.0001

0.001

0.01

0.1

0.2

0.4

0.6

0.8

− V

SD − Source-to-Drain Voltage (V)

TC = 25°C

TC = 125°C

G001

0.45

0.55

0.65

0.75

0.85

0.95

1.05

1.15

1.25

−75

−25

125

175

TC - Case Temperature (ºC)

ID = −250uA

G001

120

180

240

300

360

420

480

540

600

− V

GS - Gate-to- Source Voltage (V)

TC = 25°C,I D = −0.5A

TC = 125°C,I D = −0.5A

G001

0.5

1.5

2.5

3.5

4.5

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9

1.1 1.2

Qg - Gate Charge (nC)

ID = −0.5A

VDS = −6V

G001

120

150

180

210

240

270

300

− V

DS - Drain-to-Source Voltage (V)

Ciss = Cgd + Cgs

Coss = Cds + Cgd

Crss = Cgd

G001

CSD23381F4

SLPS450B – OCTOBER 2013 – REVISED FEBRUARY 2014

www.ti.com

Typical MOSFET Characteristics (continued)

(TA = 25°C unless otherwise stated)

Figure 4. Gate Charge

Figure 5. Capacitance

Figure 6. Threshold Voltage vs Temperature

Figure 7. On-State Resistance vs Gate-to-Source Voltage

Figure 8. Normalized On-State Resistance vs Temperature

Figure 9. Typical Diode Forward Voltage

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