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74LVC00AD Arkusz danych(PDF) 5 Page - NXP Semiconductors

Numer części 74LVC00AD
Szczegółowy opis  Quad 2-input NAND gate Rev. 7 ??25 April 2012
PDF  14 Pages
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Producent  PHILIPS [NXP Semiconductors]
Strona internetowa  http://www.nxp.com
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74LVC00AD Arkusz danych(HTML) 5 Page - NXP Semiconductors

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74LVC00A
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 7 — 25 April 2012
5 of 14
NXP Semiconductors
74LVC00A
Quad 2-input NAND gate
10. Dynamic characteristics
[1]
Typical values are measured at Tamb =25
°C and VCC = 1.2 V, 1.8 V, 2.5 V, 2.7 V, and 3.3 V respectively.
[2]
tpd is the same as tPLH and tPHL.
[3]
Skew between any two outputs of the same package switching in the same direction. This parameter is guaranteed by design.
[4]
CPD is used to determine the dynamic power dissipation (PD in
μW).
PD =CPD
× VCC2 × fi × N+ Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz; fo = output frequency in MHz
CL = output load capacitance in pF
VCC = supply voltage in Volts
N = number of inputs switching
Σ(CL × VCC2 × fo) = sum of the outputs
11. Waveforms
Table 7.
Dynamic characteristics
Voltages are referenced to GND (ground = 0 V). For test circuit see Figure 7.
Symbol Parameter
Conditions
−40 °C to +85 °C
−40 °C to +125 °C Unit
Min
Typ[1]
Max
Min
Max
tpd
propagation delay
nA, nB to nY; see Figure 6
[2]
VCC =1.2 V
-
12
-
-
-
ns
VCC = 1.65 V to 1.95 V
0.3
3.8
8.4
0.3
9.7
ns
VCC = 2.3 V to 2.7 V
1.0
2.2
4.8
1.0
5.7
ns
VCC = 2.7 V
1.0
2.3
5.1
1.0
5.9
ns
VCC = 3.0 V to 3.6 V
0.5
2.0
4.3
0.5
5.1
ns
tsk(o)
output skew time
VCC = 3.0 V to 3.6 V
[3]
-
-
1.0
-
1.5
ns
CPD
power dissipation
capacitance
per gate; VI =GND to VCC
[4]
VCC = 1.65 V to 1.95 V
-
5.6
-
-
-
pF
VCC = 2.3 V to 2.7 V
-
8.9
-
-
-
pF
VCC = 3.0 V to 3.6 V
-
11.8
-
-
-
pF
VM = 1.5 V at VCC
≥ 2.7 V.
VM =0.5
× VCC at VCC <2.7 V.
VOL and VOH are typical output voltage levels that occur with the output load.
Fig 6.
The input (nA, nB) to output (nY) propagation delays
mna213
nA, nB input
nY output
tPHL
tPLH
VM
VM
VOL
VOH
GND
VI



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