HCD6NC70S datasheet(3/7 Pages) SEMIHOW

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Typical Characteristics

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

024

DS = 350V

DS = 140V

DS = 560V

Note : I

D = 1.5A

G, Total Gate Charge [nC]

GS = 20V

GS = 10V

Note : T

J = 25

D, Drain Current [A]

-1

400

800

1200

1600

2000

iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

* Note ;

1. V

GS = 0 V

2. f = 1 MHz

rss

oss

iss

DS, Drain-Source Voltage [V]

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.1

* Notes :

1. V

GS= 0V

2. 300us Pulse Test

SD, Source-Drain Voltage [V]

150

-1

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Bottom : 4.5 V

* Notes :

1. 300us Pulse Test

2. T

C = 25

DS, Drain-Source Voltage [V]

2468

0.1

-25

* Notes :

1. V

DS= 20V

2. 300us Pulse Test

GS, Gate-Source Voltage [V]

150

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