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HTP8A60H Arkusz danych(PDF) 3 Page - SemiHow Co.,Ltd. |
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HTP8A60H Arkusz danych(HTML) 3 Page - SemiHow Co.,Ltd. |
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3 / 6 page ![]() ◎ SEMIHOW REV.A1,March 2013 Typical Characteristics Fig 1. R.M.S. current vs. Power dissipation Fig 2. R.M.S. current vs. Case temperature Fig 3. Gate power characteristics Fig 4. Surge on state current rating (Non-repetitive) Fig 5. Gate trigger current vs. junction temperature Fig 6. Gate trigger voltage vs. junction temperature 0 1 2 3 4 5 6 7 8 9 10 90 100 110 120 130 180 o 150 o 120 o 90 o 60 o R.M.S. on state current, I T(RMS) [A] 30 o 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 30 o 60 o 90 o 120 o 150 o R.M.S. on state current, I T(RMS) [A] 180 o 10 0 10 1 10 2 0 10 20 30 40 50 60 70 80 90 100 50Hz 60Hz Time [cycles] 10 0 10 1 10 2 10 3 10 4 10 -1 10 0 10 1 25[ oC] I +GT1 I -GT1 I -GT3 P G(AV)(0.5W) P GM(5W) V GD Gate current, I G [mA] -50 -25 0 25 50 75 100 125 150 0 1 2 Junction temperature, T J [ oC] I +GT1 I -GT1 I -GT3 -50 -25 0 25 50 75 100 125 150 0 1 2 Junction temperature, T J [ oC] V +GT1 V -GT1 V -GT3 |
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