STP36N55M5 datasheet(3/15 Pages) STMICROELECTRONICS

Numer części	STP36N55M5

Szczegółowy opis	N-channel 550 V, 0.06 typ., 33 A MDmesh V Power MOSFET in TO-220 and TO-247 packages

PDF	15 Pages

Scroll/Zoom	100%

Producent	STMICROELECTRONICS [STMicroelectronics]

Strona internetowa	http://www.st.com

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3 / 15 page

STP36N55M5, STW36N55M5

Electrical ratings

Doc ID 022902 Rev 2

3/15

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 25

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

20.8

IDM

(1)

Drain current (pulsed)

132

PTOT

Total dissipation at TC = 25 °C

190

dv/dt (1)

ISD ≤ 33 A, di/dt ≤400 A/µs; VDS(Peak) < V(BR)DSS, VDD = 340 V.

Peak diode recovery voltage slope

V/ns

Tstg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

TO-220

TO-247

Rthj-case Thermal resistance junction-case max

0.66

°C/W

Rthj-amb Thermal resistance junction-ambient max

62.5

°C/W

Table 4.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetetive or not repetetive

(pulse width limited by Tjmax )

EAS

Single pulse avalanche energy (starting

TJ=25°C, ID= IAR; VDD=50 V)

510

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