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HAT1069C Arkusz danych(PDF) 4 Page - Renesas Technology Corp

Numer części HAT1069C
Szczegółowy opis  Silicon P Channel Power MOS FET
PDF  6 Pages
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Producent  RENESAS [Renesas Technology Corp]
Strona internetowa  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAT1069C Arkusz danych(HTML) 4 Page - Renesas Technology Corp

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HAT1069C
R07DS1169EJ0400 Rev.4.00
Page 4 of 5
Mar 19, 2014
Case Temperature Tc (
°C)
Static Drain to Source on State Resistance
vs. Temperature
Drain Current ID (A)
Forward Transfer Admittance vs.
Drain Current
–25
25
075
50
100 125
150
20
40
60
80
100
120
VGS = –4.5 V
–3
–0.1
–1
–10
–0.3
10
100
1
0.1
Tc = –25
°C
VDS = –10 V
75
°C
25
°C
Pulse Test
Pulse Test
ID = –4 A, –1.5 A, –1 A
–1 A
–1.5 A
–4 A
–2.5 V
–1.8 V
Drain Current ID (A)
Switching Characteristics
1000
100
10
–1
–100
–10
–0.1
tf
tr
td(off)
td(on)
VGS = –4.5 V, VDD = –10 V
Source to Drain Voltage VSD (V)
–12
–16
–8
–4
0
–0.4
–0.8
–1.2
–1.6
–2.0
Reverse Drain Current vs.
Source to Drain Voltage
Ta = 25
°C
–5 V
VGS = 0, 5 V
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
0–4
–2
–8
–10
–6
–12
10000
1000
100
10
Ciss
Coss
Crss
VGS = 0
f = 1 MHz
–16
–8
0
0
10
20
–8
–4
0
ID = –3 A
Gate Charge Qg (nc)
Dynamic Input Characteristics
VDD = –10, –12 V
–7 V
–5 V
Pulse Test
VDD = –12 V
–10 V
–5 V
–7 V
–1 A
–4 A
–1.5 A



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