2SC4466

Preliminary

NPN EPITAXIAL SILICON TRANSISTO

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R214-019.b



PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

120

V

Collector-Emitter Voltage

80

V

Emitter-Base Voltage

6

V

Collector Current

6

A

Base Current

3

A

Pc

60

W

Junction Temperature

150

°C

Storage Temperature

-55 ~150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector Cut-Off Current

10

µA

Emitter Cut-Off Current

10

µA

Collector-Emitter Breakdown Voltage

80

V

DC Current Gain

50

180

Collector-Emitter Saturation Voltage

1.5

V

Current Gain Bandwidth Product

20

MHz

Output Capacitance

Cob

110

pF

Switching time

Turn-on time

0.16

µS

Storage time

2.60

µS

Fall time

0.34

µS



RANK

O

P

Y

RANGE

50~100

70~140

90~180