2SC2570A datasheet(2/8 Pages) NEC

Numer części	2SC2570A

Szczegółowy opis	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

PDF	8 Pages

Scroll/Zoom	100%

Producent	NEC [NEC]

Strona internetowa	http://www.nec.com/

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Data Sheet P10404EJ3V0DS00

2SC2570A

ELECTRICAL CHARACTERISTICS (TA = +25 °C)

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

DC Current Gain

hFE

Note 1

VCE = 10 V, IC = 20 mA

–

200

–

Gain Bandwidth Product

VCE = 10 V, IC = 20 mA

–

5.0

–

GHz

Output Capacitance

COb

Note 2

VCB = 10 V, IE = 0, f = 1.0 MHz

–

0.7

0.9

Insertion Power Gain

|S21e|2

VCE = 10 V, IC = 20 mA, f = 1.0 GHz

–

Noise Figure

VCE = 10 V, IC = 5 mA, f = 1.0 GHz

–

1.5

3.0

Maximum Available Gain

MAG

VCE = 10 V, IC = 20 mA, f = 1.0 GHz

–

11.5

–

Collector Cutoff Current

ICBO

VCB = 15 V, IE = 0

–

0.1

µA

Emitter Cutoff Current

IEBO

VEB = 2.0 V, IC = 0

–

0.1

µA

Notes 1. Pulse Measurement: PW

≤ 350

µs, Duty Cycle ≤ 2%

2. The emitter and case terminal should be connected to the guard terminal of the capacitance bridge.

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