2SC3355 datasheet(1/8 Pages) NEC

Numer części	2SC3355

Szczegółowy opis	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

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DATA SHEET

SILICON TRANSISTOR

2SC3355

HIGH FREQUENCY LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

DATA SHEET

Document No. P10355EJ3V1DS00 (3rd edition)

Date Published March 1997 N

Printed in Japan

1985

©

DESCRIPTION

The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise

amplifier at VHF, UHF and CATV band.

It has lange dynamic range and good current characteristic.

FEATURES

• Low Noise and High Gain

NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz

NF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz

• High Power Gain

MAG = 11 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz

ABSOLUTE MAXIMUM RATINGS (TA = 25

C)

Collector to Base Voltage

VCBO

20

V

Collector to Emitter Voltage

VCEO

12

V

Emitter to Base Voltage

VEBO

3.0

V

Collector Current

IC

100

mA

Total Power Dissipation

PT

600

mW

Junction Temperature

Tj

150

C

Storage Temperature

Tstg

65 to +150

C

ELECTRICAL CHARACTERISTICS (TA = 25

C)

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

Collector Cutoff Current

ICBO

1.0

AVCB = 10 V, IE = 0

Emitter Cutoff Current

IEBO

1.0

AVEB = 1.0 V, IC = 0

DC Current Gain

hFE

50

120

300

VCE = 10 V, IC = 20 mA

Gain Bandwidth Product

fT

6.5

GHz

VCE = 10 V, IC = 20 mA

Output Capacitance

Cob

0.65

1.0

pF

VCB = 10 V, IE = 0, f = 1.0 MHz

Insertion Power Gain

S21e2

9.5

dB

VCE = 10 V, IC = 20 mA, f = 1.0 GHz

Noise Figure

NF

1.1

dB

VCE = 10 V, IC = 7 mA, f = 1.0 GHz

Noise Figure

NF

1.8

3.0

dB

VCE = 10 V, IC = 40 mA, f = 1.0 GHz

hFE Classification

Class

K

Marking

K

hFE

50 to 300

PACKAGE DIMENSIONS

in millimeters (inches)

5.2 MAX.

(0.204 MAX.)

0.5

(0.02)

2.54

(0.1)

1.

2.

3.

Base

Emitter

Collector

EIAJ

JEDEC

IEC

: SC-43B

: TO-92

: PA33

1.27

(0.05)

12

3

Podobny numer części - 2SC3355

Producent	Numer części	Arkusz danych	Szczegółowy opis
Unisonic Technologies	2SC3355	107Kb / 3P	HIGH FREQUENCY LOW NOISE AMPLIFIER
Unisonic Technologies	2SC3355	82Kb / 2P	HIGH FREQUENCY LOW NOISE AMPLIFIER
Renesas Technology Corp	2SC3355	248Kb / 10P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
Renesas Technology Corp	2SC3355	293Kb / 10P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
American Microsemicondu...	2SC3355	438Kb / 1P	NPN Silicon Epitaxial Transistor

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