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TZX2V4B Arkusz danych(PDF) 2 Page - Diodes Incorporated

Numer części TZX2V4B
Szczegółowy opis  500mW EPITAXIAL PLANAR ZENER DIODE
PDF  4 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Producent  DIODES [Diodes Incorporated]
Strona internetowa  http://www.diodes.com
Logo DIODES - Diodes Incorporated

TZX2V4B Arkusz danych(HTML) 2 Page - Diodes Incorporated

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D
S30089 Rev. 1P-5
2 of 4
TZX2V4 - TZX36C
Type
Number
Zener Voltage Range (Note 2)
Test Current
Maximum Zener
Impedance
Maximum Reverse
Leakage Current
VZ @IZT
IZT
ZZT @ IZT
IR
@VR
Min (V)
Max (V)
mA
WmA
V
TZX2V4
2.3
2.6
5.0
100
5.0
0.5
TZX2V4A
2.3
2.5
5.0
100
5.0
0.5
TZX2V4B
2.4
2.6
5.0
100
5.0
0.5
TZX2V7
2.5
2.9
5.0
100
5.0
0.5
TZX2V7A
2.5
2.7
5.0
100
5.0
0.5
TZX2V7B
2.6
2.8
5.0
100
5.0
0.5
TZX2V7C
2.7
2.9
5.0
100
5.0
0.5
TZX3V0
2.8
3.2
5.0
100
5.0
0.5
TZX3V0A
2.8
3.0
5.0
100
5.0
0.5
TZX3V0B
2.9
3.1
5.0
100
5.0
0.5
TZX3V0C
3.0
3.2
5.0
100
5.0
0.5
TZX3V3
3.1
3.5
5.0
100
5.0
1.0
TZX3V3A
3.1
3.3
5.0
100
5.0
1.0
TZX3V3B
3.2
3.4
5.0
100
5.0
1.0
TZX3V3C
3.3
3.5
5.0
100
5.0
1.0
TZX3V6
3.4
3.8
5.0
100
5.0
1.0
TZX3V6A
3.4
3.6
5.0
100
5.0
1.0
TZX3V6B
3.5
3.7
5.0
100
5.0
1.0
TZX3V6C
3.6
3.8
5.0
100
5.0
1.0
TZX3V9
3.7
4.1
5.0
100
5.0
1.0
TZX3V9A
3.7
3.9
5.0
100
5.0
1.0
TZX3V9B
3.8
4.0
5.0
100
5.0
1.0
TZX3V9C
3.9
4.1
5.0
100
5.0
1.0
TZX4V3
4.0
4.5
5.0
100
5.0
1.5
TZX4V3A
4.0
4.2
5.0
100
5.0
1.5
TZX4V3B
4.1
4.3
5.0
100
5.0
1.5
TZX4V3C
4.2
4.4
5.0
100
5.0
1.5
TZX4V3D
4.3
4.5
5.0
100
5.0
1.5
TZX4V7
4.4
4.9
5.0
100
5.0
2.0
TZX4V7A
4.4
4.6
5.0
100
5.0
2.0
TZX4V7B
4.5
4.7
5.0
100
5.0
2.0
TZX4V7C
4.6
4.8
5.0
100
5.0
2.0
TZX4V7D
4.7
4.9
5.0
100
5.0
2.0
TZX5V1
4.8
5.3
5.0
100
5.0
2.0
TZX5V1A
4.8
5.0
5.0
100
5.0
2.0
TZX5V1B
4.9
5.1
5.0
100
5.0
2.0
TZX5V1C
5.0
5.2
5.0
100
5.0
2.0
TZX5V1D
5.1
5.3
5.0
100
5.0
2.0
TZX5V6
5.2
5.9
5.0
40
5.0
2.0
TZX5V6A
5.2
5.5
5.0
40
5.0
2.0
TZX5V6B
5.3
5.6
5.0
40
5.0
2.0
TZX5V6C
5.4
5.7
5.0
40
5.0
2.0
TZX5V6D
5.5
5.8
5.0
40
5.0
2.0
TZX5V6E
5.6
5.9
5.0
40
5.0
2.0
Electrical Characteristics @ TA = 25°C unless otherwise specified
Notes:
1. Valid provided that device terminals are kept at ambient temperature.
2. Tested with pulses, t
£ 1.0ms.



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