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2SC5182 Arkusz danych(PDF) 3 Page - NEC

Numer części 2SC5182
Szczegółowy opis  NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
PDF  12 Pages
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Producent  NEC [NEC]
Strona internetowa  http://www.nec.com/
Logo NEC - NEC

2SC5182 Arkusz danych(HTML) 3 Page - NEC

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2SC5182
CHARACTERISTICS CURVES (TA = 25 ˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
TA - Ambient Temperature - °C
50
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
VBE - Base to Emitter Voltage - V
0.5
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
VCE - Collector to Emitter Voltage - V
1.0
0
100
200
100
150
0
10
20
30
40
50
1.0
0
5
10
15
20
25
2.0
3.0
Passive Air
Cooling
VCE = 2 V
200 A
µ
180 A
µ
160 A
µ
140 A
µ
120 A
µ
100 A
µ
80 A
µ
60 A
µ
40 A
µ
IB = 20 A
µ
90 mW
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
IC - Collector Current - mA
1
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
IC - Collector Current - mA
1
2
4
4
6
8
10
12
14
16
2
5
10
20
50
100
6
8
10
12
14
2
5
10
20
50
100
VCE = 2 V
VCE = 1 V
f = 2 GHz
f = 2 GHz
VCE = 1 V
VCE = 2 V
IC - Collector Current - mA
DC CURRENT GAIN vs.
COLLECTOR CURRENT
500
200
100
10
20
50
1
2
5
10
20
50
100
VCE = 2 V
VCE = 1 V



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