2SC5186 datasheet(1/12 Pages) NEC

Numer części	2SC5186

Szczegółowy opis	NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

PDF	12 Pages

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Producent	NEC [NEC]

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©

1994

DATA SHEET

SILICON TRANSISTOR

2SC5186

NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE

FOR LOW-NOISE MICROWAVE AMPLIFICATION

Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.

FEATURES

•

Low Noise

NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz

NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz

•

Ultra Super Mini-Mold package

ORDERING INFORMATION

PART

QUANTITY

ARRANGEMENT

NUMBER

2SC5186

50 units/box

Embossed tape, 8 mm wide,

2SC5186-T1

3 000 units/reel

Pin 3 (Collector) facing the perforations.

* Contact your NEC sales representatives to order samples for

evaluation (available in batches of 50).

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Collector to Base Voltage

VCBO

5V

Collector to Emitter Voltage

VCEO

3V

Emitter to Base Voltage

VEBO

2V

Collector Current

IC

30

mA

Total Power Dissipation

PT

90

mW

Junction Temperature

Tj

150

˚C

Storage Temperature

Tstg

–65 to +150

˚C

Document No. P12110EJ2V0DS00 (2nd edition)

(Previous No. TC-2483)

Date Published November 1996 N

Printed in Japan

1.6 ± 0.1

0.8 ± 0.1

2

1

3

PACKAGE DIMENSIONS

(Units: mm)

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

Podobny numer części - 2SC5186

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