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2SD669 Arkusz danych(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2SD669 Arkusz danych(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 3 page ![]() Elektronische Bauelemente 10-Jul-2007 Rev. B Page 2of 3 2S D669/2SD669A NPN Type Plastic Encapsulate Transistors Maximum Collector Dissipation Curve 30 20 10 0 50 100 150 Case temperature TC (°C) 3 1.0 0.3 0.01 0.03 0.1 330 10 300 1 100 Collector to emitter voltage VCE (V) Area of Safe Operation DC Operation(TC = 25°C) (13.3 V, 1.5 A) 3.5 5.5 4.0 4.5 5.0 Typical Output Characteristecs TC = 25°C P C = 20 W IB = 0 0.5 mA 1.0 1.5 2.0 2.5 3.0 1.0 0.8 0.6 0.4 0.2 010 20 Collector to emitter voltage VCE (V) 50 40 30 Typical Transfer Characteristics 500 200 100 50 20 10 5 2 1 0 0.2 0.4 0.6 0.8 1.0 Base to emitter voltage VBE (V) VCE = 5 V 300 250 200 150 100 50 1 130 300 100 10 3 Collector current IC (mA) 1,000 3,000 DC Current Transfer Ratio vs. Collector Current VCE = 5 V Ta = 75 °C –25 25 1.2 1.0 0.8 0.6 0.4 0 0.2 1 3 30 300 10 100 1,000 Collector to Emitter Saturation Voltage vs. Collector Current Collector current IC (mA) IC = 10 IB http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual |
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