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2SD669 Arkusz danych(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Numer części 2SD669
Szczegółowy opis  NPN Type Plastic Encapsulate Transistors
PDF  3 Pages
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Producent  SECOS [SeCoS Halbleitertechnologie GmbH]
Strona internetowa  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

2SD669 Arkusz danych(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

  2SD669 Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH 2SD669 Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH 2SD669 Datasheet HTML 3Page - SeCoS Halbleitertechnologie GmbH  
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Elektronische Bauelemente
10-Jul-2007 Rev. B
Page 2of 3
2S
D669/2SD669A
NPN Type
Plastic Encapsulate Transistors
Maximum Collector Dissipation
Curve
30
20
10
0
50
100
150
Case temperature TC (°C)
3
1.0
0.3
0.01
0.03
0.1
330
10
300
1
100
Collector to emitter voltage VCE (V)
Area of Safe Operation
DC Operation(TC = 25°C)
(13.3 V, 1.5 A)
3.5
5.5
4.0
4.5
5.0
Typical Output Characteristecs
TC = 25°C
P
C =
20
W
IB = 0
0.5 mA
1.0
1.5
2.0
2.5
3.0
1.0
0.8
0.6
0.4
0.2
010
20
Collector to emitter voltage VCE (V)
50
40
30
Typical Transfer Characteristics
500
200
100
50
20
10
5
2
1
0
0.2
0.4
0.6
0.8
1.0
Base to emitter voltage VBE (V)
VCE = 5 V
300
250
200
150
100
50
1
130
300
100
10
3
Collector current IC (mA)
1,000 3,000
DC Current Transfer Ratio
vs. Collector Current
VCE = 5 V
Ta = 75
°C
–25
25
1.2
1.0
0.8
0.6
0.4
0
0.2
1
3
30
300
10
100
1,000
Collector to Emitter Saturation Voltage
vs. Collector Current
Collector current IC (mA)
IC = 10 IB
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual



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