2SC5289 datasheet(1/12 Pages) NEC

Numer części	2SC5289

Szczegółowy opis	NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER

PDF	12 Pages

Scroll/Zoom	100%

Producent	NEC [NEC]

Strona internetowa	http://www.nec.com/

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1 / 12 page

©

1995

DATA SHEET

SILICON TRANSISTOR

The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital

cordless phones (DECT, PHS, etc.).

FEATURES

•P–1 = 27 dBm TYP.

@f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8

•

4-Pin Mini Mold Package

EIAJ: SC-61

ORDERING INFORMATION

Part Number

Quantity

Packing Style

2SC5289-T1

3 Kpcs/Reel

Embossed tape 8 mm wide.

Pin 3 (Base), Pin 4 (Emitter) face

to perforation side of the tape.

Remark

If you require an evaluation sample, please contact an NEC Sales

Representative. (Unit sample quantity is 50 pcs.)

ABSOLUTE MAXIMUM RATINGS (TA = 25

°C)

Parameter

Symbol

Rating

Unit

Collector to Base Voltage

VCBO

9.0

V

Collector to Emitter Voltage

VCEO

6.0

V

Emitter to Base Voltage

VEBO

2.0

V

Collector Current

IC

300

mA

Total Power Dissipation

PT

200 (CW)

mW

1.2 (duty = 1/8)Note

W

3.0 (duty = 1/24)Note

W

Junction Temperature

Tj

150

˚ C

Storage Temperature

Tstg

–65 to +150

˚ C

Note Pulse period is 10 msec or less.

2SC5289

NPN SILICON EPITAXIAL TRANSISTOR

FOR L-BAND LOW-POWER AMPLIFIER

PACKAGE DRAWING

(Unit: mm)

Document No. P10250EJ2V0DS00 (2nd edition)

Date Published December 1995 P

Printed in Japan

2.8

+0.2

–0.3

1.5

+0.2

–0.1

5°

PIN CONNECTIONS

1. Collector

2. Emitter

3. Base

4. Emitter

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