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GP800FSS18 Arkusz danych(PDF) 1 Page - Dynex Semiconductor |
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GP800FSS18 Arkusz danych(HTML) 1 Page - Dynex Semiconductor |
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1 / 10 page ![]() GP800FSS18 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10 www.dynexsemi.com FEATURES s Non Punch Through Silicon s Isolated Copper Baseplate With Al 2O3 Substrate s Low Inductance Internal Construction s Full 1800V Rating s 800A Per Module APPLICATIONS s High Power Inverters s Motor Controllers s Induction Heating s Resonant Converters The Powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP800FSS18 is a single switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. ORDERING INFORMATION Order As: GP800FSS18 Note: When ordering, please use the complete part number. KEY PARAMETERS V CES 1800V V CE(sat) (typ) 3.5V I C (max) 800A I C(PK) (max) 1600A GP800FSS18 Singles Switch IGBT Module Replaces January 2000 version, DS5261-2.0 DS5261-3.1 January 2001 Fig. 1 Single switch circuit diagram Fig. 2 Electrical connections - (not to scale) Outline type code: F (See package details for further information) C2 C1 Aux C G Aux E E1 E2 External connection External connection C1 E1 C2 E2 G Aux E Aux C |
Podobny numer części - GP800FSS18 |
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Podobny opis - GP800FSS18 |
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